RICHARDSON CONSTANT OF AL-GAAS AND AU-GAAS SCHOTTKY-BARRIER DIODES

被引：20

作者：

BORREGO, JM ^{[1
]}

GUTMANN, RJ ^{[1
]}

ASHOK, S ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT SYST ENGN,TROY,NY 12181

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 03期

关键词：

D O I：

10.1063/1.89321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：169 / 172

页数：4

共 10 条

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[7] THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS [J].

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[8]

PADOVANI FA, 1971, SEMICONDUCTOR SEMI A, V7

[9]

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[10] ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS [J].

STEIN, HJ .

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