ELECTRONIC BAND-STRUCTURE AND NONPARABOLICITY IN STRAINED-LAYER SI-SI1-XGEX SUPERLATTICES

被引：9
作者：
TURTON, RJ
JAROS, M
MORRISON, I
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.38.8397
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8397 / 8405
页数：9
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