ELECTRONIC BAND-STRUCTURE AND NONPARABOLICITY IN STRAINED-LAYER SI-SI1-XGEX SUPERLATTICES

被引：9

|

作者：

TURTON, RJ

JAROS, M

MORRISON, I

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.38.8397

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：8397 / 8405

页数：9

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