DRAIN-VOLTAGE EFFECTS ON THE THRESHOLD VOLTAGE OF A SMALL-GEOMETRY MOSFET

被引：6

作者：

CHAO, CS ^{[1
]}

AKERS, LA ^{[1
]}

PATTANAYAK, DN ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 09期

关键词：

D O I：

10.1016/0038-1101(83)90055-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：851 / 860

页数：10

共 17 条

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[9] THRESHOLD VOLTAGE OF NARROW CHANNEL FIELD-EFFECT TRANSISTORS [J].

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[10] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS [J].

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