DRIFT-MOBILITY MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS USING TRAVELING-WAVE METHOD

被引：44

作者：

FRITZSCHE, H

CHEN, KJ

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.28.4900

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4900 / 4902

页数：3

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