HIGH-TEMPERATURE HARDNESS OF GA1-XINXAS

被引：29

作者：

GURUSWAMY, S ^{[1
]}

HIRTH, JP ^{[1
]}

FABER, KT ^{[1
]}

机构：

[1] OHIO STATE UNIV,DEPT MET ENGN,COLUMBUS,OH 43210

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.337495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4136 / 4140

页数：5

共 24 条

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[5]

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[6]

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[9] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

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[10] HIGH-STRESS DEFORMATION OF GAAS [J].

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