INITIAL GROWTH STAGE OF INAS/GAAS STUDIED BY RHEED TRAXS METHOD

被引：14

作者：

SHIGETOMI, J ^{[1
]}

FUWA, K ^{[1
]}

SHIMIZU, S ^{[1
]}

YAMAKAWA, H ^{[1
]}

INO, S ^{[1
]}

机构：

[1] UNIV TOKYO,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90956-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

RHEED-TRAXS (total reflection angle X-ray spectroscopy in RHEED experiments) technique has been focused on an observation of In desorption processes from GaAs(100) substrate surfaces. Results show that In desorption energy sensitively changes along with arsenic partial pressure, P(AS4). Furthermore, at 3.0 x 10(-8) Torr of P(AS4), ITDS (isothermal desorption spectroscopy) curves have a refraction point below the In L-alpha line intensity corresponding to one monolayer of InAs. RHEED intensity measurements indicate that the refraction point corresponds to the change of the growth manner, i.e. a single layer growth occurs followed by three-dimensional island growth, the Stranski-Krastanov growth mode, at this P(AS4). On the other hand, at 1.0 x 10(-7) Torr of P(AS4), InAs grows with the Volmer-Weber growth mode.

引用

页码：110 / 114

页数：5

共 13 条

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