IMPURITY SEGREGATION IN ION-IMPLANTED IRON

被引:1
|
作者
TUROS, A [1 ]
MEYER, O [1 ]
机构
[1] KERNFORSCHUNGSZENTRUM KARLSRUHE,INST NUKL FESTKORPERPHYS,D-7500 KARLSRUHE,FED REP GER
来源
MATERIALS SCIENCE AND ENGINEERING | 1985年 / 69卷 / 01期
关键词
D O I
10.1016/0025-5416(85)90371-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
15
引用
收藏
页码:49 / 55
页数:7
相关论文
共 50 条
  • [41] MODELING THE IMPURITY PROFILE IN AN ION-IMPLANTED LAYER OF AN IGFET FOR THE CALCULATION OF THRESHOLD VOLTAGES
    DANG, LM
    IWAI, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 116 - 117
  • [42] ION-IMPLANTED ZN DIFFUSION AND IMPURITY-INDUCED DISORDERING OF AN ALGAAS SUPERLATTICE
    ZUCKER, EP
    HASHIMOTO, A
    FUKUNAGA, T
    WATANABE, N
    APPLIED PHYSICS LETTERS, 1989, 54 (06) : 564 - 566
  • [43] Impurity-assisted annealing of point defect complexes in ion-implanted silicon
    Pellegrino, P
    Kuznetsov, AY
    Svensson, BG
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 489 - 492
  • [44] Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation
    Suzuki, Kunihiro
    Ikeda, Keiji
    Yamashita, Yoshimi
    Harada, Masaomi
    Taoka, Noriyuki
    Kiso, Osamu
    Yamamoto, Toyoji
    Sugiyama, Naoharu
    Takagi, Shin-Ichi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (04) : 627 - 633
  • [45] An analytical model of the diffusion redistribution of ion-implanted impurity in the gate region of a MOS transistor
    Bormontov, EN
    Bryazgunov, YI
    Lezhenin, VP
    TECHNICAL PHYSICS LETTERS, 2003, 29 (01) : 47 - 50
  • [46] NONDESTRUCTIVE MONITORING OF IMPURITY ACTIVATION IN ION-IMPLANTED SILICON BY SURFACE ACOUSTIC-WAVES
    BHARAT, R
    DAS, P
    WEBSTER, RT
    VARAHRAMYAN, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C120 - C120
  • [47] DIFFUSION OF ZINC INTO ION-IMPLANTED IRON DOPED INDIUM-PHOSPHIDE
    FAVENNEC, PN
    HENRY, L
    SALVI, M
    HUBER, AM
    MORILLOT, G
    SOLID-STATE ELECTRONICS, 1983, 26 (08) : 771 - 775
  • [48] INFLUENCE OF CARBON CONTENT IN NICKEL AND IRON ON TRAPPING OF ION-IMPLANTED DEUTERIUM
    BANDURKO, VV
    PISAREV, AA
    CHERNOV, II
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1990, 54 (07): : 1411 - 1413
  • [49] Studying the environments of ion-implanted arsenic defects in amorphous and recrystallised silicon with impurity EXAFS
    Greaves, GN
    Dent, AJ
    Derst, G
    Kalbitzer, S
    Muller, G
    BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1997, 101 (09): : 1258 - 1264
  • [50] CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES ON ION-IMPLANTED IRON LAYERS
    REUTHER, H
    ISOTOPENPRAXIS, 1988, 24 (11-12): : 419 - 422