IMPURITY SEGREGATION IN ION-IMPLANTED IRON

被引：1
作者：
TUROS, A [1 ]
MEYER, O [1 ]
机构：
[1] KERNFORSCHUNGSZENTRUM KARLSRUHE,INST NUKL FESTKORPERPHYS,D-7500 KARLSRUHE,FED REP GER
来源：
MATERIALS SCIENCE AND ENGINEERING | 1985年 / 69卷 / 01期
关键词：
D O I：
10.1016/0025-5416(85)90371-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
15
引用
收藏
页码：49 / 55
页数：7
相关论文
共 50 条
[31]   MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION-IMPLANTED WITH NITROGEN [J].
MAREST, G ;
FAYEULLE, S ;
MONCOFFRE, N ;
TOUSSET, J .
EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 :110-115
[32]   DISTRIBUTION OF AN ION-IMPLANTED IMPURITY IN SILICON AFTER REPEATED PULSED ELECTRON ANNEALING [J].
DVURECHENSKII, AV ;
IGONINA, NM ;
GROTZSCHEL, R .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (02) :218-219
[33]   CORROSION-RESISTANT SURFACES ON ION-IMPLANTED IRON AND STEEL [J].
GRANATA, RD ;
DECROSTA, MA ;
MCINTYRE, JF ;
LEIDHEISER, H .
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 1987, 26 (03) :427-433
[34]   MOSSBAUER-EFFECT IN CARBON ION-IMPLANTED IRON ALLOY [J].
HAN, KS .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (04) :627-627
[35]   AN EXAMINATION OF THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON [J].
TIAN, S ;
YANG, SH ;
MORRIS, S ;
PARAB, K ;
TASCH, AF ;
KAMENITSA, D ;
REECE, R ;
FREER, B ;
SIMONTON, RB ;
MAGEE, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (09) :3215-3219
[36]   CONDUCTIVITY CHANGES AND IMPURITY DEFECT INTERACTIONS IN ION-IMPLANTED AMORPHOUS-SILICON [J].
COFFA, S ;
PRIOLO, F ;
POATE, JM ;
GLARUM, SH .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :603-606
[37]   THE REGROWTH AND IMPURITY DIFFUSION-PROCESSES IN THE ARC ANNEALING OF ION-IMPLANTED SILICON [J].
LUE, JT ;
CHAO, CC .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :984-987
[38]   Non-Destructive Determination of Ion-Implanted Impurity Distribution in Silicon by EPMA [J].
Alexeyev, Andrey P. .
MIKROCHIMICA ACTA, 1992, :229-233
[39]   Comprehensive analytical expression for dose dependent ion-implanted impurity concentration profiles [J].
Suzuki, K ;
Sudo, R ;
Tada, Y ;
Tomotani, M ;
Feudel, T ;
Fichtner, W .
SOLID-STATE ELECTRONICS, 1998, 42 (09) :1671-1678
[40]   Defect engineering and prevention of impurity gettering at Rp/2 in ion-implanted silicon [J].
Kögler, R ;
Peeva, A ;
Kaschny, J ;
Skorupa, W ;
Hutter, H .
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 :399-404
12345