SUBSTRATE DEVELOPMENT FOR THE GROWTH OF SILICON FOILS BY RAMP ASSISTED FOIL CASTING TECHNIQUE (RAFT)

被引：2

作者：

BECK, A

GEISSLER, J

HELMREICH, D

机构：

[1] Heliotronic GmbH

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 01期

关键词：

D O I：

10.1016/0022-0248(90)90318-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A variety of potential substrates has been tested for use in the RAFT (ramp assisted foil casting technique) process. The best results were obtained for graphite ramps coated with pyrolitic carbon (PyC). The interaction mechanism between the silicon melt and the PyC surface is explained in terms of a SiC interface layer which governs the crystallization of the melt film and the separation of the RAFT foil from the ramp. © 1990.

引用

页码：113 / 118

页数：6

共 5 条

[1] SHAPED CRYSTAL-GROWTH OF SILICON FOILS BY RAFT [J].