THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS

被引：44

作者：

LAKHANI, AA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1888 / 1891

页数：4

共 13 条

[1] OHMIC CONTACTS FOR GAAS DEVICES [J].

COX, RH ;

STRACK, H .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+

[2] THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS [J].

ILIADIS, A ;

SINGER, KE .

SOLID-STATE ELECTRONICS, 1983, 26 (01) :7-&

[3] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[4] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].

KOWALCZYK, SP ;

SCHAFFER, WJ ;

KRAUT, EA ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :705-708

[5] CONTACT RESISTANCES OF SEVERAL METALS AND ALLOYS TO GAAS [J].

MATINO, H ;

TOKUNAGA, M ;

HERRICK, IW ;

ADAMS, MF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) :709-&

[6] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :471-&

[7] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J].

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :541-550

[8] MODELS FOR OHMIC CONTACTS ON GRADED CRYSTALLINE OR AMORPHOUS HETEROJUNCTIONS [J].

SEBESTYEN, T .

SOLID-STATE ELECTRONICS, 1982, 25 (07) :543-550

[9] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

STALL, RA ;

WOOD, CEC ;

BOARD, K ;

DANDEKAR, N ;

EASTMAN, LF ;

DEVLIN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4062-4069

[10]

Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990

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