ATOMIC LAYER EPITAXY OF ALAS AND ALGAAS

被引：13
|
作者：
MEGURO, T
IWAI, S
AOYAGI, Y
OZAKI, K
YAMAMOTO, Y
SUZUKI, T
OKANO, Y
HIRATA, A
机构：
[1] HOSEI UNIV,COLL ENGN,KOGANEI,TOKYO 184,JAPAN
[2] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN
[3] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90579-A
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Atomic layer epitaxy (ALE) of AlAs and AlGaAs with metalorganic vapor-phase epitaxy (MOVPE) under Ar-ion laser irradiation has been successfully realized in a triethylaluminum (TEA)/AsH3 system for the first time. Comparison with the growth characteristics of MOVPE with alternative feeding modes of TMA/AsH3 and TEA/AsH3 is discussed. Application to laser-ALE of AlGaAs using a triethylgallium (TEG)/TEA/AsH3 system is also discussed. © 1990.
引用
收藏
页码：540 / 544
页数：5
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