INVESTIGATION OF DIFFUSION OF BORON IN SILICON FROM A LAYER DOPED BY ION BOMBARDMENT

被引:0
作者
PAVLOV, PV
USKOV, VA
ZORIN, EI
TETELBAU.DI
BARANOVA, AS
机构
来源
SOVIET PHYSICS SOLID STATE,USSR | 1967年 / 8卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2221 / &
相关论文
共 14 条
[1]  
Boltaks B.I., 1963, DIFFUSION SEMICONDUC
[2]   RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J].
DAVIES, JA ;
BROWN, F ;
BALL, GC ;
DOMEIJ, B .
CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) :1070-&
[3]   IMPERFECTIONS IN SILICON INDUCED BY DIFFUSION OF IMPURITIES [J].
INO, H ;
KAWAMURA, T ;
YASUFUKU, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (11) :692-&
[4]  
IRVIN IC, 1962, BELL SYST TECH J, V46, P387
[5]   MEASUREMENT OF THE DEPT OF DIFFUSED LAYERS IN SILICON BY THE GROOVING METHOD [J].
MCDONALD, B ;
GOETZBERGER, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :141-144
[6]   BORON INDUCED DISLOCATIONS IN SILICON [J].
MILLER, DP ;
MOORE, CR ;
MOORE, JE .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2648-&
[7]  
PAVLOV PV, 1966, FIZ TVERD TELA, V8, P750
[8]  
PAVLOV PV, 1966, SOV PHYS SOLID STATE, V8, P601
[9]  
PAVLOV PV, 1966, FIZ TVERD TELA, V8, P2782
[10]  
PAVLOV PV, 1965, SOVIET PHYSICSSOLID, V7, P2386