ACTIVE LAYER THICKNESS DEPENDENT PHOTO-LUMINESCENCE PROPERTIES IN INGAASP/INP DH STRUCTURES - CORRELATION WITH DEVICE PERFORMANCE

被引：0

作者：

RAO, EVK

DUHAMEL, N

DEVOLDERE, P

THIBIERGE, H

GILLERON, M

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来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1983年 / 65期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

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页码：257 / 264

页数：8

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[12] HOT-CARRIER EFFECTS IN 1.3-MU IN1-XGAXASYP1-Y LIGHT-EMITTING-DIODES
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