CHEMICALLY SENSITIVE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：4

作者：

PECORA, A

FORTUNATO, G

MARIUCCI, L

BEARZOTTI, A

机构：

[1] IESS-CNR, 00156 ROMA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80351-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work the application of a-Si:H thin film transistor (TFT) technology in the field of chemical sensors is presented. In particular, two different types of devices have been fabricated: a) Pd-gate hydrogen sensors; b) K+-ion sensitive FET (ISFET). The obtained results show that a-Si:H TFT can be successfully used as gas-sensitive and ion-sensitive sensors and can represent a promising technology in this area.

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页码：1253 / 1256

页数：4

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