共 50 条
- [1] HIGH TEMPERATURE ANNEALING OF GAMMA-RADIATION DEFECTS IN N-TYPE GERMANIUM SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1481 - 1488
- [2] CAPACITANCE SPECTROSCOPY OF GAMMA-RADIATION DEFECTS IN N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 322 - 324
- [4] INFLUENCE OF TYPE OF GROUP V DOPANT ON ANNEALING OF GAMMA-RADIATION DEFECTS IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1229 - 1230
- [7] HELIUM-TEMPERATURE ANNEALING OF ELECTRON-IRRADIATED N-TYPE GERMANIUM PHYSICAL REVIEW B, 1971, 4 (06): : 1903 - &
- [8] TEMPERATURE-DEPENDENCE OF THE ABSORPTION OF MILLIMETER RADIATION IN N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (05): : 492 - 494
- [9] ANNEALING OF METASTABLE FRENKEL PAIRS FORMED IN N-TYPE GERMANIUM AS A RESULT OF LOW-TEMPERATURE GAMMA-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 466 - 467