DIFFUSION OF CD IN INP AND IN0.53GA0.47AS

被引：12

作者：

AYTAC, S

SCHLACHETZKI, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90265-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：169 / 173

页数：5

共 15 条

[1] CARRIER DENSITY PROFILES IN ZN-DIFFUSED AND CD-DIFFUSED INP [J].

ANDO, H ;

SUSA, N ;

KANBE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L197-L200

[2] SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM-PHOSPHIDE [J].

AYTAC, S ;

SCHLACHETZKI, A .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :57-&

[3] DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODES [J].

AYTAC, S ;

SCHLACHETZKI, A .

SOLID-STATE ELECTRONICS, 1982, 25 (11) :1135-&

[4]

CASEY HC, 1973, ATOMIC DIFFUSION SEM, pCH6

[5] DIFFUSION OF CD AND ZN IN INP BETWEEN 550 AND 650-DEGREES-C [J].

CHAND, N ;

HOUSTON, PA .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :37-52

[6] DIFFUSION OF CD INTO INP AT 680-DEGREES-C [J].

DUTT, BV ;

CHIN, AK ;

BONNER, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :2014-2019

[7] AN OPEN-TUBE METHOD FOR DIFFUSION OF ZINC INTO GAAS [J].

FIELD, RJ ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1567-1570

[8] ANOMALOUS IMPURITY DIFFUSION IN III-V COMPOUNDS - THE CONSEQUENCE OF SELF-INDUCED FIELD EFFECTS [J].

HILDEBRAND, O .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :575-584

[9] GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INP [J].

HOUSTON, PA .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (11) :2935-2961

[10] TRANSFERRED-ELECTRON EFFECT IN IN0.53GA0.47AS [J].

KOWALSKY, W ;

SCHLACHETZKI, A .

ELECTRONICS LETTERS, 1983, 19 (06) :189-190

← 1 2 →