RECOMBINATION MECHANISMS IN SI AND SI THIN-FILMS DETERMINED BY PICOSECOND REFLECTIVITY MEASUREMENTS NEAR BREWSTERS ANGLE

被引：21

作者：

FAUCHET, PM

NIGHAN, WL

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.96701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：721 / 723

页数：3

共 12 条

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[7]

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[8] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].

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[9] MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED-LASER ANNEALING BY TIME-DEPENDENT OPTICAL REFLECTIVITY [J].

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[10]

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