HIGH-EFFICIENCY (21.4-PERCENT) GA0.75IN0.25AS/GAAS(EG = 1.15 EV) CONCENTRATOR SOLAR-CELLS AND THE INFLUENCE OF LATTICE MISMATCH ON PERFORMANCE

被引：23
作者：
LUDOWISE, MJ
DIETZE, WT
BOETTCHER, R
KAMINAR, N
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 05期
关键词：
D O I：
10.1063/1.94391
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：468 / 470
页数：3
相关论文
共 8 条
[1]   SILICON SOLAR-CELL WITH A NOVEL LOW-RESISTANCE EMITTER STRUCTURE [J].
BORDEN, PG ;
WALSH, RV .
APPLIED PHYSICS LETTERS, 1982, 41 (07) :649-651
[2]   IMPROVED MOBILITY IN OM-VPE-GROWN GA1-XINXAS [J].
DIETZE, WT ;
LUDOWISE, MJ ;
COOPER, CB .
ELECTRONICS LETTERS, 1981, 17 (19) :698-699
[3]   GA0.80IN0.20AS 1.20EV HIGH QUANTUM EFFICIENCY JUNCTION FOR MULTIJUNCTION SOLAR-CELLS [J].
DIETZE, WT ;
LUDOWISE, MJ ;
GREGORY, PE .
APPLIED PHYSICS LETTERS, 1982, 41 (10) :984-986
[4]  
FRAAS LM, 1982, P SOC PHOTO-OPT INST, V323, P110, DOI 10.1117/12.934284
[5]  
FRAAS LM, 1982, 18TH PHOT SPEC C SAN
[6]   THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE [J].
LUDOWISE, MJ ;
COOPER, CB ;
SAXENA, RR .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1051-1068
[7]   CW LASER-DIODES AND HIGH-POWER ARRAYS OF INXGA1-XAS FOR 1.06-MUM EMISSION [J].
NUESE, CJ ;
ETTENBERG, M ;
ENSTROM, RE ;
KRESSEL, H .
APPLIED PHYSICS LETTERS, 1974, 24 (05) :224-227
[8]   INTERFACIAL LATTICE MISMATCH EFFECTS IN III-V COMPOUNDS [J].
OLSEN, GH .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :223-239
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