MODEL OF TEMPERATURE-DEPENDENT DEFECT INTERACTION AND AMORPHIZATION IN CRYSTALLINE SILICON DURING ION IRRADIATION

被引：136
作者：
HECKING, N
HEIDEMANN, KF
KAAT, ET
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期
关键词：
D O I：
10.1016/0168-583X(86)90407-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：760 / 764
页数：5
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