HIGH-PERFORMANCE AL0.48IN0.52AS/GA0.47IN0.53AS MSM-HEMT RECEIVER OEIC GROWN BY MOCVD ON PATTERNED INP SUBSTRATES

被引：26

作者：

HONG, WP

CHANG, GK

BHAT, R

GIMLETT, JL

NGUYEN, CK

SASAKI, G

KOZA, M

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 23期

关键词：

D O I：

10.1049/el:19891049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1561 / 1563

页数：3

共 7 条

[1]

CHANG GK, 1989, ELECTRON LETT, V25, P1021, DOI 10.1049/el:19890683

[2]

CROW JD, 1989, OFC 89, P83

[3] MOCVD-GROWN ALLNAS/GALNAS MODFET WITH DRAIN CURRENTS HIGHER THAN 1.3A/MM [J].

HONG, WP ;

CHANG, GK ;

BHAT, R ;

CHAN, W ;

VANDERGAAG, B ;

LIN, P ;

ABELES, JH .

ELECTRONICS LETTERS, 1989, 25 (09) :580-581

[4]

Nobuhara H., 1988, Electronics Letters, V24, P1246, DOI 10.1049/el:19880848

[5]

NOBUHARA H, OPTOELECTRON DEV TEC, V2, P303

[6] NEW FABRICATION TECHNOLOGY FOR LONG-WAVELENGTH RECEIVER OEICS [J].

SPEAR, DAH ;

DAWE, PJG ;

ANTELL, GR ;

LEE, WS ;

BLAND, SW .

ELECTRONICS LETTERS, 1989, 25 (02) :156-157

[7] VERY HIGH-SPEED GAINAS METAL-SEMICONDUCTOR-METAL PHOTODIODE INCORPORATING AN ALLNAS/GALNAS GRADED SUPERLATTICE [J].

WADA, O ;

NOBUHARA, H ;

HAMAGUCHI, H ;

MIKAWA, T ;

TACKEUCHI, A ;

FUJII, T .

APPLIED PHYSICS LETTERS, 1989, 54 (01) :16-17

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