MICROWAVE SPECTROSCOPIC MEASUREMENT OF THE ELECTRON-DENSITY IN A PLANAR DISCHARGE - RELATION TO REACTIVE-ION ETCHING OF SILICON-OXIDE

被引：20
作者：
DEVRIES, OAM
VANROOSMALEN, AJ
PUYLAERT, GCC
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 09期
关键词：
D O I：
10.1063/1.335458
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4386 / 4390
页数：5
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