SPATIALLY RESOLVED CATHODOLUMINESCENCE OF SEMICONDUCTORS

被引：8

作者：

TRAGERCOWAN, C ^{[1
]}

KEAN, A ^{[1
]}

YANG, F ^{[1
]}

HENDERSON, B ^{[1
]}

ODONNELL, KP ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90254-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

引用

页码：319 / 324

页数：6

共 16 条

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