SPATIALLY RESOLVED CATHODOLUMINESCENCE OF SEMICONDUCTORS

被引:8
作者
TRAGERCOWAN, C [1 ]
KEAN, A [1 ]
YANG, F [1 ]
HENDERSON, B [1 ]
ODONNELL, KP [1 ]
机构
[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND
来源
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词
D O I
10.1016/0921-4526(93)90254-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.
引用
收藏
页码:319 / 324
页数:6
相关论文
共 16 条
[1]  
[Anonymous], 2013, CATHODOLUMINESCENCE
[2]   POLARIZED EXCITATION LUMINESCENCE OF SEMICONDUCTOR QUANTUM-WELLS [J].
BALIGA, A ;
ANDERSON, NG .
APPLIED PHYSICS LETTERS, 1992, 60 (03) :283-285
[3]  
CHEN X, UNPUB SEMICOND SCI T
[4]   PHOTOREFLECTANCE STUDY OF GALLIUM-ARSENIDE GROWN ON SI [J].
DUTTA, M ;
SHEN, H ;
VERNON, SM ;
DIXON, TM .
APPLIED PHYSICS LETTERS, 1990, 57 (17) :1775-1777
[5]  
HELLWEGE KH, 1982, LANDOLTBORNSTEIN, V17, P25443
[6]   EXCITON COMPLEXES IN ZNSE LAYERS - A TOOL FOR PROBING THE STRAIN DISTRIBUTION [J].
KUDLEK, G ;
PRESSER, N ;
POHL, UW ;
GUTOWSKI, J ;
LILJA, J ;
KUUSISTO, E ;
IMAI, K ;
PESSA, M ;
HINGERL, K ;
SITTER, H .
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :309-315
[7]  
MOORE KJ, 1990, SPECTROSCOPY SEMICON, P273
[8]  
NAPCHAN E, 1987, I PHYS C SER, V87, P733
[9]   TEMPERATURE-DEPENDENCE OF SEMICONDUCTOR BAND-GAPS [J].
ODONNELL, KP ;
CHEN, X .
APPLIED PHYSICS LETTERS, 1991, 58 (25) :2924-2926
[10]   STRUCTURAL-PROPERTIES OF THE ZNSE GAAS SYSTEM GROWN BY MOLECULAR-BEAM EPITAXY [J].
PETRUZZELLO, J ;
GREENBERG, BL ;
CAMMACK, DA ;
DALBY, R .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2299-2303