HIGH-SPEED MONOLITHICALLY INTEGRATED GAAS PHOTORECEIVER USING A METAL-SEMICONDUCTOR-METAL PHOTODIODE

被引：22
作者：
ITO, M
KUMAI, T
HAMAGUCHI, H
MAKIUCHI, M
NAKAI, K
WADA, O
SAKURAI, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期
关键词：
D O I：
10.1063/1.96351
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1129 / 1131
页数：3
相关论文
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[6]   ALGAAS/GAAS P-I-N PHOTODIODE PREAMPLIFIER MONOLITHIC PHOTORECEIVER INTEGRATED ON A SEMI-INSULATING GAAS SUBSTRATE [J].
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