ION-BEAM AND TEMPERATURE ANNEALING DURING HIGH-DOSE IMPLANTS

被引：14
|
作者：
CANNAVO, S [1 ]
GRIMALDI, MG [1 ]
RIMINI, E [1 ]
FERLA, G [1 ]
GANDOLFI, L [1 ]
机构：
[1] SGS ATES,I-95100 CATANIA,ITALY
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期
关键词：
D O I：
10.1063/1.96240
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：138 / 140
页数：3
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