HETEROEPITAXIAL GROWTH OF TIN-DOPED INDIUM OXIDE-FILMS ON SINGLE-CRYSTALLINE YTTRIA-STABILIZED ZIRCONIA SUBSTRATES

被引：66
|
作者：
KAMEI, M
YAGAMI, T
TAKAKI, S
SHIGESATO, Y
机构：
[1] Research Center, Asahi Glass Co. Ltd., Yokohama-shi, Kanagawa 221
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 20期
关键词：
D O I：
10.1063/1.111474
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Heteroepitaxial growth of tin-doped indium oxide (ITO) film was achieved for the first time by using single crystalline yttria stabilized zirconia (YSZ) as substrates. The epitaxial relationship between ITO film and YSZ substrate was ITO[100] parallel-to YSZ[100]. By comparing the electrical properties of this epitaxial ITO film with that of a randomly oriented polycrystalline ITO film grown on a glass substrate, neither the large angle grain boundaries nor the crystalline orientation were revealed to be dominant in determining the carrier mobility in ITO films.
引用
收藏
页码：2712 / 2714
页数：3
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