ELECTRICAL CHARACTERIZATION TO 4 THZ OF N-TYPE AND P-TYPE GAAS USING THZ TIME-DOMAIN SPECTROSCOPY

被引：121

作者：

KATZENELLENBOGEN, N

GRISCHKOWSKY, D

机构：

[1] IBM Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.107762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory.

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页码：840 / 842

页数：3

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