AN X-RAY PHOTOELECTRON SPECTROSCOPIC ANALYSIS OF PLASMA DEPOSITED SILICON-NITRIDE FILMS

被引：10

作者：

CHIANG, JN

HESS, DW

机构：

[1] Department of Chemical Engineering, University of California, Berkeley

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.345075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of deposition conditions on the structure and composition of plasma deposited silicon nitride films was studied using x-ray photoelectron spectroscopy. Plasma deposited silicon nitride films were transferred directly from the deposition chamber into a surface analysis system, thereby permitting analysis of as-deposited films without modification due to ion sputtering. Plasma deposited silicon nitride films with N:Si ratios from 1.8-0.3 were deposited using SiH4, NH3, N2, and H 2 as the source gases. The N:Si ratio in the films increased with increasing nitrogen concentration in the gas phase. Changes in the deposition power or the substrate temperature also influenced the N:Si ratio. Large differences in the film structure were observed for plasma deposited silicon nitride films formed with NH3 compared to N2 with respect to deposition temperature variations.

引用

页码：6851 / 6859

页数：9

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