MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS

被引：36

作者：

HORIKOSHI, Y

KAWASHIMA, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90341-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：17 / 22

页数：6

共 14 条

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[8] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS [J].

HORIKOSHI, Y ;

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