DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS ON GATE AL THICKNESS IN METAL SIO2/SI STRUCTURES

被引：40
作者：
ZEKERIYA, V
MA, TP
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期
关键词：
D O I：
10.1063/1.334094
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1017 / 1020
页数：4
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