POLYCRYSTALLINE THIN-FILM ZNSEXTE1-X - PREPARATION AND PROPERTIES

被引：5

作者：

DUTTA, J

PAL, R

CHAUDHURI, S

PAL, AK

机构：

[1] Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1994年 / 27卷 / 07期

关键词：

D O I：

10.1088/0022-3727/27/7/031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSeTe1-x films were prepared by co-evaporating ZnSe and ZnTe powders from a two-zone hot wall evaporation jig onto glass substrates. The optical band gaps for different x were determined and this showed a bowing behaviour. The refractive indices and extinction coefficients have been determined as a function of wavelength. Variations of surface roughness with composition and microstructural details were also reported. Grain boundary scattering effects were found to be a dominant factor controlling electron transport processes in these films.

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页码：1538 / 1543

页数：6

相关论文

共 23 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] ALTERNATIVE ROUTE FOR STUDYING THE GRAIN-BOUNDARY SCATTERING IN SEMICONDUCTOR-FILMS OF HIGH-RESISTIVITY [J].

BHATTACHARYYA, D ;

CHAUDHURI, S ;

PAL, AK .

VACUUM, 1993, 44 (08) :797-801

[3] BANDGAP AND OPTICAL-TRANSITIONS IN THIN-FILMS FROM REFLECTANCE MEASUREMENTS [J].

BHATTACHARYYA, D ;

CHAUDHURI, S ;

PAL, AK .

VACUUM, 1992, 43 (04) :313-316

[4] SOME ASPECTS OF SURFACE-ROUGHNESS IN POLYCRYSTALLINE THIN-FILMS - OPTICAL-CONSTANTS AND GRAIN DISTRIBUTION [J].

BHATTACHARYYA, D ;

CHAUDHURI, S ;

PAL, AK ;

BHATTACHARYYA, SK .

VACUUM, 1992, 43 (12) :1201-1205

[5] EVOLUTION OF THE BAND-GAP AND THE DOMINANT RADIATIVE RECOMBINATION CENTER VERSUS THE COMPOSITION FOR ZNSE1-XTEX ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BRASIL, MJSP ;

NAHORY, RE ;

TURCOSANDROFF, FS ;

GILCHRIST, HL ;

MARTIN, RJ .

APPLIED PHYSICS LETTERS, 1991, 58 (22) :2509-2511

[6] PREPARATION AND OPTICAL-PROPERTIES OF CD1-XZNXTE FILMS [J].

CHATTOPADHYAY, KK ;

SARKAR, A ;

CHAUDHURI, S ;

PAL, AK .

VACUUM, 1991, 42 (17) :1113-1116

[7]

DEMEY G, 1973, ELECT COMMUN, V28, P309

[8] INTERPRETATION OF THE TEMPERATURE-DEPENDENT BEHAVIOR OF THE EMISSION FROM ISOELECTRONIC TELLURIUM CENTERS IN EPITAXIAL ZNSE1-XTEX [J].

DHESE, K ;

GOODWIN, J ;

HAGSTON, WE ;

NICHOLLS, JE ;

DAVIES, JJ ;

COCKAYNE, B ;

WRIGHT, PJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) :1210-1216

[9] TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J].

DOW, JD ;

REDFIELD, D .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :594-+

[10] ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE [J].

DOW, JD ;

REDFIELD, D .

PHYSICAL REVIEW B, 1970, 1 (08) :3358-&