PREPARATION OF SI3N4 BY CHEMICAL VAPOR-DEPOSITION (EFFECTS OF RAW GAS-FLOW RATE)

被引：5
作者：
HIRAI, T
NIIHARA, K
GOTO, T
机构：
[1] TOHOKU UNIV, IRON STEEL & OTHER MET RES INST, SENDAI, MIYAGI 980, JAPAN
[2] TOHOKU UNIV, GRAD SCH, SENDAI, MIYAGI 980, JAPAN
来源：
JOURNAL OF THE JAPAN INSTITUTE OF METALS | 1977年 / 41卷 / 04期
关键词：
D O I：
10.2320/jinstmet1952.41.4_358
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学科分类号：
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页码：358 / 367
页数：10
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