TEM STUDY OF THE GROWTH OF PD2SI ISLANDS FROM PD-TA FILMS ON SI

The crystallization of amorphous Pd-Ta films and their reactions with Si(001) substrates were studied by transmission electron microscopy. The diffusion of Pd from the amorphous film is hightly enhanced during its relaxation, followed by the formation of epitaxial Pd2Si islands. The crystallization of the film leads to a considerable increase of the Pd diffusion and to the formation of TaSi2-Pd2Si-Si structure. The structure of islands, their coincidence with the Si lattice and the kinetics of their growth are determined. It is found that some islands, formed at the initial stage of the reaction, start to dissolve at the later stages. Here we propose the model of the growth and dissolution of Pd2Si islands during the reaction of Pd Ta films with Si and the model of Pd diffusion taking into account the relaxation processes in the film.