ELECTRON AND CHEMICAL-KINETICS IN THE LOW-PRESSURE RF DISCHARGE ETCHING OF SILICON IN SF6

被引：84
|
作者：
KLINE, LE
机构：
来源：
IEEE TRANSACTIONS ON PLASMA SCIENCE | 1986年 / 14卷 / 02期
关键词：
D O I：
10.1109/TPS.1986.4316517
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
引用
收藏
页码：145 / 155
页数：11
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