ELECTRON AND CHEMICAL-KINETICS IN THE LOW-PRESSURE RF DISCHARGE ETCHING OF SILICON IN SF6

被引：84

作者：

KLINE, LE

机构：

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 1986年 / 14卷 / 02期

关键词：

D O I：

10.1109/TPS.1986.4316517

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

引用

页码：145 / 155

页数：11

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