GAINP MASS-TRANSPORT AND GAINP/GAAS BURIED-HETEROSTRUCTURE LASERS

被引：26

作者：

GROVES, SH

LIAU, ZL

PALMATEER, SC

WALPOLE, JN

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.102813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mass transport of a semiconductor alloy has been demonstrated using Ga 0.51In0.49P which is lattice matched to GaAs. Buried-heterostructure diode lasers with Ga0.51In0.49P as cladding and GaAs as the active layer have been made using this fabrication technique. Initial attempts produce devices with room-temperature lasing thresholds of ∼33 mA and 15% differential power efficiency per facet.

引用

页码：312 / 314

页数：3

共 14 条

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[2]

Antonishkis N. Yu., 1988, Soviet Technical Physics Letters, V14, P310

[3]

Derry P. L., 1988, Optoelectronics - Devices and Technologies, V3, P117

[4] NEW REACTOR DESIGN FOR GROWTH OF INP AND RELATED ALLOYS [J].