BOUNDARY-CONDITIONS FOR PN HETEROJUNCTIONS

被引：31
作者：
LUNDSTROM, MS
机构：
来源：
SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 05期
关键词：
D O I：
10.1016/0038-1101(84)90158-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：491 / 496
页数：6
相关论文
共 19 条
[1]   INEQUALITY OF SEMICONDUCTOR HETEROJUNCTION CONDUCTION-BAND-EDGE DISCONTINUITY AND ELECTRON-AFFINITY DIFFERENCE [J].
BAUER, RS ;
ZURCHER, P ;
SANG, HW .
APPLIED PHYSICS LETTERS, 1983, 43 (07) :663-665
[2]   THEORY FOR NON-EQUILIBRIUM BEHAVIOR OF ANISOTYPE GRADED HETEROJUNCTIONS [J].
CHATTERJEE, A ;
MARSHAK, AH .
SOLID-STATE ELECTRONICS, 1983, 26 (01) :59-64
[3]   GENERAL FORMULATION OF THE CURRENT-VOLTAGE CHARACTERISTIC OF A P-N HETEROJUNCTION SOLAR-CELL [J].
FONASH, SJ .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2115-2118
[4]   BAND-STRUCTURE AND PHOTOCURRENT COLLECTION IN CRYSTALLINE AND POLYCRYSTALLINE P-N HETEROJUNCTION SOLAR-CELLS [J].
FONASH, SJ .
SOLID-STATE ELECTRONICS, 1979, 22 (10) :907-910
[5]   DERIVATION OF CURRENT-VOLTAGE CHARACTERISTICS FOR GRADED HETEROJUNCTIONS [J].
HALL, WF .
ELECTRONICS LETTERS, 1973, 9 (23) :548-549
[6]   BOUNDARY CONDITIONS AT P-N JUNCTIONS [J].
HAUSER, JR .
SOLID-STATE ELECTRONICS, 1971, 14 (02) :133-&
[7]   USE OF THE GUMMEL NUMBER IN CALCULATING THE DIFFUSION CURRENT-DENSITY IN SCHOTTKY DIODES [J].
KLEEFSTRA, M .
SOLID-STATE ELECTRONICS, 1982, 25 (01) :63-66
[8]  
Kroemer H., 1975, Critical Reviews in Solid State Sciences, V5, P555, DOI 10.1080/10408437508243512
[9]  
LUNDSTROM MS, 1983, IEEE T ELECTRON DEV, V30
[10]   LAW OF THE JUNCTION FOR DEGENERATE MATERIAL WITH POSITION-DEPENDENT BAND-GAP AND ELECTRON-AFFINITY [J].
MARSHAK, AH ;
SHRIVASTAVA, R .
SOLID-STATE ELECTRONICS, 1979, 22 (06) :567-571
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