THE INFLUENCE OF SURFACE RECOMBINATION AND TRAPPING ON THE CATHODIC PHOTOCURRENT AT P-TYPE III-V-ELECTRODES

被引：181

作者：

KELLY, JJ ^{[1
]}

MEMMING, R ^{[1
]}

机构：

[1] PHILIPS GMBH FORSCHUNGSLAB,D-2000 HAMBURG 54,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 04期

关键词：

D O I：

10.1149/1.2123961

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：730 / 738

页数：9

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