GROWTH OF INN ON GAAS SUBSTRATES BY THE REACTIVE EVAPORATION METHOD

被引：13
作者：
SATO, Y
SATO, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 09期
关键词：
D O I：
10.1143/JJAP.28.L1641
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L1641 / L1643
页数：3
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