NEW METHOD FOR LIQUID-PHASE EPITAXY

被引：4

作者：

STAREEV, GD ^{[1
]}

机构：

[1] INST ELECTRON TECHNOL,SCI & PROD CTR SEMICOND,AL LOTNIKOW 32-46,02-668 WARSAW,POLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 32卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90031-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：189 / 196

页数：8

共 12 条

[1] SOME OBSERVATIONS OF SURFACE MORPHOLOGIES OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY [J].

CROSSLEY, I ;

SMALL, MB .

JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) :160-168

[2] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION [J].

CROSSLEY, I ;

SMALL, MB .

JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) :157-&

[3]

Deitch R. H., 1970, Journal of Crystal Growth, V7, P69, DOI 10.1016/0022-0248(70)90117-X

[4]

Donahue J. A., 1970, Journal of Crystal Growth, V7, P221, DOI 10.1016/0022-0248(70)90014-X

[5] ON PREPARATION OF EPITAXIAL FILMS OF III-V COMPOUNDS [J].

JAIN, VK ;

SHARMA, SK .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1145-&

[6] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].

LONGO, JT ;

HARRIS, JS ;

CHU, JC ;

GERTNER, ER .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) :107-&

[7] TEMPERATURE GRADIENT CELL FOR LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS [J].

MATTES, BL ;

ROUTE, RK .

JOURNAL OF CRYSTAL GROWTH, 1972, 16 (03) :219-222

[8] HIGH PURITY GAAS CRYSTALS GROWN BY LIQUID PHASE EPITAXY [J].

MIKI, H ;

OTSUBO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) :509-&

[9]

Minden H. T., 1970, Journal of Crystal Growth, V6, P228, DOI 10.1016/0022-0248(70)90071-0

[10]

NELSON H, 1963, RCA REV, V24, P603

← 1 2 →