MODIFICATION OF INTERFACIAL CHARGE BETWEEN SIO2 AND SILICON

被引：4

作者：

ARONOWITZ, S ^{[1
]}

ANAND, K ^{[1
]}

RIGA, G ^{[1
]}

机构：

[1] RIGA ANALYT LAB,SANTA CLARA,CA 95054

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.99271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：913 / 915

页数：3

共 9 条

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[7] DEPENDENCE OF THE FLAT-BAND VOLTAGE OF SI-MOS ON DISTRIBUTION OF CESIUM IN SIO2 - COMPARISON OF 2 IMPLANTATION METHODS [J].

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[8]

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