COVERAGE DEPENDENCE OF MIGRATION POTENTIAL OF CATION ADATOMS ON GAAS(001)-(2X4) SURFACE

被引：17
|
作者：
SHIRAISHI, K [1 ]
ITO, T [1 ]
OHNO, T [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LARGE SCALE INTEGRAT LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期
关键词：
D O I：
10.1016/0038-1101(94)90256-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We theoretically investigate the migration potential of cation adatoms on the reconstructed As-rich GaAs (001)-(2 x 4) surface by ab initio calculation. By increasing the number of cation adatoms, we also study how migration potential depends on coverage. The calculated results for Ga adatoms suggest that the long-bridge sites are energetically the most favorable at the iniital stage of crystal growth. However, as the Ga coverage increases, the missing dimer row sites become the most favorable. Migration potentials strongly depend on the adatom coverage. Similar results were obtained for Al adatom migration. Furthermore, based on these migration potentials, we demonstrate the dynamical behavior of cation adatoms on GaAs(001) surface by performing Monte-Carlo simulations at finite temperatures.
引用
收藏
页码：601 / 604
页数：4
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