GA0.47IN0.53AS/INP MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING AT 1.53 MU-M

被引：50
作者：
TSANG, WT
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期
关键词：
D O I：
10.1063/1.94727
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：288 / 290
页数：3
相关论文
共 18 条
[1]   GAIN SPECTRA OF QUANTUM-WELL LASERS [J].
BURT, MG .
ELECTRONICS LETTERS, 1983, 19 (06) :210-211
[2]  
BURT MG, COMMUNICATION
[3]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[4]  
DINGLE R, 1976, Patent No. 3982207
[5]   GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS [J].
DUTTA, NK ;
HARTMAN, RL ;
TSANG, WT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) :1243-1246
[6]   CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1236-1245
[7]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[8]   ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAWAMURA, Y ;
ASAHI, H ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :841-846
[9]  
RAZEGHI M, 1983, 4TH INT C INT OPT OP
[10]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR COUPLED MULTIPLE QUANTUM-WELL IN1-XGAXP1-ZASZ-INP HETEROSTRUCTURE LASER-DIODES [J].
REZEK, EA ;
HOLONYAK, N ;
FULLER, BK .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2402-2405
12