CRYSTALLINE QUALITIES AND CRITICAL CURRENT DENSITIES OF AS-GROWN BA2YCU3OX THIN-FILMS ON SILICON WITH BUFFER LAYERS

被引:38
作者
MYOREN, H
NISHIYAMA, Y
MIYAMOTO, N
KAI, Y
YAMANAKA, Y
OSAKA, Y
NISHIYAMA, F
机构
[1] Hiroshima University, Saijo, Higashi-Hiroshima
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 06期
关键词
Ba[!sub]2[!/sub] YCu30[!sub]x[!/sub] thin films; Critical currents; Crystalline quality; Deposited on silicon with buffer layers; Ion channeling; Rheed; Rutherford backscattering;
D O I
10.1143/JJAP.29.L955
中图分类号
O59 [应用物理学];
学科分类号
摘要
As-grown Ba2YCu3Ox thin films (\lesssim100 nm) have been prepared by rf magnetron sputtering deposited on Si(100) with buffer layers of YSZ and Y2O3/YSZ. Epitaxial growth of Ba2YCu3Ox thin films is confirmed by ion channeling measurements along the (100) directions of the Si substrate showing a χmin of 60% on YSZ/Si, and 6% on Y2O3/YSZ/Si using 2.0 MeV He+. The as-grown films have critical current densities of 104 A/cm2 on YSZ/Si and 106 A/cm2 on Y2O3/YSZ/Si at 77 K. Our results indicate that the superconducting properties of the films are limited primarily by the value of lattice mismatch between the Ba2YCu3Ox and buffer layers. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码:L955 / L957
页数:3
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