MODELING THE INVERSION LAYER AT EQUILIBRIUM

被引：7

作者：

JU, DH

WARNER, RM

机构：

[1] Univ of Minnesota, Dep of Electrical, Engineering, Minneapolis, MN, USA, Univ of Minnesota, Dep of Electrical Engineering, Minneapolis, MN, USA

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 10期

关键词：

D O I：

10.1016/0038-1101(84)90010-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：907 / 911

页数：5

共 9 条

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[3] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J].

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[5] A GENERAL-SOLUTION FOR STEP JUNCTIONS WITH INFINITE EXTRINSIC END REGIONS AT EQUILIBRIUM [J].

JINDAL, RP ;

WARNER, RM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) :348-351

[6] AN EXTENDED AND UNIFIED SOLUTION FOR THE SEMICONDUCTOR SURFACE PROBLEM AT EQUILIBRIUM [J].

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WARNER, RM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7427-7432

[7]

JINDAL RP, 1981, THESIS U MINNESOTA M

[8] REPLACING THE DEPLETION APPROXIMATION [J].

WARNER, RM ;

JINDAL, RP .

SOLID-STATE ELECTRONICS, 1983, 26 (04) :335-342

[9] FIELD AND RELATED SEMICONDUCTOR-SURFACE AND EQUILIBRIUM-STEP-JUNCTION VARIABLES IN TERMS OF THE GENERAL-SOLUTION [J].

WARNER, RM ;

JINDAL, RP ;

GRUNG, BL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) :994-996

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