Q-BAND GAAS-MESFET OSCILLATOR WITH 30-PERCENT EFFICIENCY

[1] HIGH-EFFICIENCY KA-BAND AND KU-BAND MESFET OSCILLATORS [J]. ELECTRONICS LETTERS, 1985, 21 (06) : 254 - 255

[2] GEDDES J, 1984 IEEE MICR MILL, P87

[3] MILLIMETER-WAVE GAAS-FETS PREPARED BY MBE [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 1 - 2

[4] KIM B, 1987, MICROWAVE J MAR, P153

[5] KIM B, 1986 GAAS IC S, P61

[6] KOBIKI M, 1985 IEEE MICR MILL, P31

[7] HIGH-EFFICIENCY 35-GHZ GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1259 - 1263

[8] 110 GHZ GAAS-FET OSCILLATOR [J]. ELECTRONICS LETTERS, 1985, 21 (05) : 178 - 179

[9] HIGH-EFFICIENCY Q-BAND GAAS-FET OSCILLATOR [J]. ELECTRONICS LETTERS, 1984, 20 (07) : 297 - 298

[10] TSERNG HQ, 1985 GAAS IC S, P11

[1] HIGH-EFFICIENCY KA-BAND AND KU-BAND MESFET OSCILLATORS [J]. ELECTRONICS LETTERS, 1985, 21 (06) : 254 - 255

[2] GEDDES J, 1984 IEEE MICR MILL, P87

[3] MILLIMETER-WAVE GAAS-FETS PREPARED BY MBE [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 1 - 2

[4] KIM B, 1987, MICROWAVE J MAR, P153

[5] KIM B, 1986 GAAS IC S, P61

[6] KOBIKI M, 1985 IEEE MICR MILL, P31

[7] HIGH-EFFICIENCY 35-GHZ GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1259 - 1263

[8] 110 GHZ GAAS-FET OSCILLATOR [J]. ELECTRONICS LETTERS, 1985, 21 (05) : 178 - 179

[9] HIGH-EFFICIENCY Q-BAND GAAS-FET OSCILLATOR [J]. ELECTRONICS LETTERS, 1984, 20 (07) : 297 - 298

[10] TSERNG HQ, 1985 GAAS IC S, P11