PASSIVATION OF ZINC ACCEPTORS IN INP BY ATOMIC-HYDROGEN COMING FROM ARSINE DURING METALORGANIC VAPOR-PHASE EPITAXY

被引：78

作者：

ANTELL, GR ^{[1
]}

BRIGGS, ATR ^{[1
]}

BUTLER, BR ^{[1
]}

KITCHING, SA ^{[1
]}

STAGG, JP ^{[1
]}

CHEW, A ^{[1
]}

SYKES, DE ^{[1
]}

机构：

[1] UNIV TECHNOL LOUGHBOROUGH,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TF,LEICS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.99824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：758 / 760

页数：3

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共 9 条

[1] COTTON FA, 1972, ADV INORGANIC CHEM, P373
[2] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS
JOHNSON, NM
BURNHAM, RD
STREET, RA
THORNTON, RL
[J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1102 - 1105
[3] SPECTROSCOPIC EVIDENCE FOR THE HYDROGEN PASSIVATION OF ZINC ACCEPTORS IN GALLIUM-ARSENIDE
PAJOT, B
JALIL, A
CHEVALLIER, J
AZOULAY, R
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (05) : 305 - 307
[4] HOLE-MEDIATED CHEMISORPTION OF ATOMIC-HYDROGEN IN SILICON
PANKOVE, JI
MAGEE, CW
WANCE, RO
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 748 - 750
[5] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
CARLSON, DE
BERKEYHEISER, JE
WANCE, RO
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (24) : 2224 - 2225
[6] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS
PEARTON, SJ
CORBETT, JW
SHI, TS
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195
[7] PEARTON SJ, 1987, I PHYSICS C SERIES, V83, P289
[8] STUDY OF THE ATOMIC MODELS OF 3 DONOR-LIKE TRAPS ON OXIDIZED SILICON WITH ALUMINUM GATE FROM THEIR PROCESSING DEPENDENCES
SAH, CT
SUN, JYC
TZOU, JJT
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5864 - 5879
[9] A CRITICAL-APPRAISAL OF GROWTH MECHANISMS IN MOVPE
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 111 - 122