MONOLITHICALLY PELTIER-COOLED VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：30
作者：
BERGER, PR
DUTTA, NK
CHOQUETTE, KD
HASNAIN, G
CHAND, N
机构：
[1] AT and T Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 01期
关键词：
D O I：
10.1063/1.105547
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first tunable monolithically integrated thermoelectric controlled GaAs/AlGaAs vertical-cavity surface-emitting laser diode. The thermoelectric element is the n+-GaAs substrate based on the Peltier effect. A variation of active region temperature of +/- 7.5-degrees-C has been achieved using +/- 100 mA of thermoelectric cooler current. The observed wavelength tuning associated with this temperature shift is +/- 6 angstrom. The device is useful for applications that require a high degree of frequency stability or small frequency tuning. Some examples of potential applications are in high data rate lightwave transmission, self-electro-optic device switches, and spectroscopy.
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页码：117 / 119
页数：3
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