LARGE MONOLITHIC TWO-DIMENSIONAL ARRAYS OF GALNASP/INP SURFACE-EMITTING LASERS

被引：28
作者：
LIAU, ZL
WALPOLE, JN
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 09期
关键词：
D O I：
10.1063/1.98148
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：528 / 530
页数：3
相关论文
共 9 条
[1]   SURFACE-EMITTING 2ND-ORDER DISTRIBUTED BRAGG REFLECTOR LASER WITH DYNAMIC WAVELENGTH STABILIZATION AND FAR-FIELD ANGLE OF 0.25-DEGREES [J].
EVANS, GA ;
HAMMER, JM ;
CARLSON, NW ;
ELIA, FR ;
JAMES, EA ;
KIRK, JB .
APPLIED PHYSICS LETTERS, 1986, 49 (06) :314-315
[2]   5 WATT CONTINUOUS-WAVE ALGAAS LASER-DIODES [J].
HARNAGEL, GL ;
SCIFRES, DR ;
KUNG, HH ;
WELCH, DF ;
CROSS, PS .
ELECTRONICS LETTERS, 1986, 22 (11) :605-606
[3]   SURFACE-EMITTING GAINASP-INP LASER WITH LOW THRESHOLD CURRENT AND HIGH-EFFICIENCY [J].
LIAU, ZL ;
WALPOLE, JN .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :115-117
[4]  
LIAU ZL, IN PRESS IEEE J QUAN
[5]  
TSANG DZ, IN PRESS IEEE J LIGH
[6]   CONSIDERATION ON THRESHOLD CURRENT-DENSITY OF GAINASP INP SURFACE EMITTING JUNCTION LASERS [J].
UCHIYAMA, S ;
IGA, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (02) :302-309
[7]   MONOLITHIC TWO-DIMENSIONAL ARRAYS OF HIGH-POWER GALNASP/INP SURFACE-EMITTING DIODE-LASERS [J].
WALPOLE, JN ;
LIAU, ZL .
APPLIED PHYSICS LETTERS, 1986, 48 (24) :1636-1638
[8]   MONOLITHIC GAAS/ALGAAS DIODE-LASER DEFLECTOR DEVICES FOR LIGHT-EMISSION NORMAL TO THE SURFACE [J].
WINDHORN, TH ;
GOODHUE, WD .
APPLIED PHYSICS LETTERS, 1986, 48 (24) :1675-1677
[9]   SURFACE-EMITTING GAALAS GAAS-LASER WITH ETCHED MIRRORS [J].
YANG, JJ ;
JANSEN, M ;
SERGANT, M .
ELECTRONICS LETTERS, 1986, 22 (08) :438-439
1