AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION

被引：17
作者：
WU, CY
DAIH, YW
机构：
[1] Natl Chiao-Tung Univ, Inst of, Electronics, Hsin-Chu, Taiwan, Natl Chiao-Tung Univ, Inst of Electronics, Hsin-Chu, Taiwan
来源：
SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 12期
关键词：
Acknowledgemenr-The authors would like to express their sincere thanks to Electronics Research and Service Organization (ERSO); Industrial Technology Research Institute (ITRI); Republic of China; for grant support. Special thanks are given to Dr. C. T. Shih and Mr. F. C. Tseng for their stimulating discussions. Most importantly; the efforts of the technical staff in the VLSI group; especially those of Mr. H. H. Chen; who prepared the test wafers; are appreciated;
D O I：
10.1016/0038-1101(85)90053-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
13
引用
收藏
页码：1271 / 1278
页数：8
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